PRODUCT DETAILS

Thin film thickness / refractive index ellipsometric measurement ME Series

ME-210/ME-210-T

High-speed mapping ellipsometer that can measure the entire surface of φ8 “wafers” that can measure surface thicknesses of 1 nm or less at high speed and high density.

Furthermore, it supports various film thickness distribution measurements such as micro area measurement and transparent substrate support.

Case Studies

Resist thickness coated by spin-courting process

Specifications
  • measurement
Repeatability
  • Thickness: 0.1nm
    Refractive index: 0.001 ※Standard deviation of the 100 repeatedly measurement of SiO2 (about 100 nm thickness) on Si
Speed
  • Max. speed
    ≥ 900 points/min (in standard mode, 100mm square area)
    ≥ 5,000 points/min (in high-resolution, 1mm square area)
Light source
  • Semiconductor Laser (wavelength: 636nm)
Spot size
  • Standard mode: 0.5mm □
    High-resolution mode: 5.5µm □
Incident angle
  • 70°
Dimensions
(W x D x H)
  • 270 × 337 × Max 631mm
Transparent substrate measurement
  • ME-210-T 　Yes
    ME-210　 　No
  • Hardware
Sample stage size
  • Max. ８ inch
    (Φ300mm in option)
Dimensions
(W x D x H)
  • ME-210-T　650 × 650 × 1744mm
    ME-210　　650 × 650 × 1740mm
Weight
  • Approx. 200kg
Interface
  • GigE (camera signal)
  • Miscellaneous
Interface
  • GigE（camera signal）
Power supply
  • AC100～240V
Software
  • ME-View
Accessories
  • Desktop PC, Monitor, User manual, Standard sample
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Thin film thickness / refractive index ellipsometric measurement ME/SE Series

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Category

  • #Ellipsometric measurement

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