High-Speed Ellipsometer 2D Film Thickness Measurement System

ME-210 / ME-310

ME-210/ME-310 2D scan allows to measure the film thickness changes of less than 1 nm
at high speed and high density. Support size up to φ12 inches (300 mm) wafer.

Various functions / options to support film thickness measurement.
・compatible with transparent substrates
・zoom & high resolution measurement

Case Studies

Resist thickness coated by spin-courting process

Specifications
  • measurement
Repeatability
  • Thickness: 0.1nm Refractive index: 0.001 ※Standard deviation of the 100 repeatedly measurement of SiO2 (about 100 nm thickness) on Si
Speed
  • Max. speed ≥ 900 points/min (in standard mode, 100mm square area) ≥ 5,000 points/min (in high-resolution, 1mm square area)
Light source
  • Semiconductor Laser (wavelength: 636nm)
Spot size
  • Standard mode: 0.5mm □ High-resolution mode: 5.5µm □
Incident angle
  • 70°
Dimensions (W x D x H)
  • 270 × 337 × Max 631mm
Transparent substrate measurement
  • ME-210-T  Yes ME-210   No
  • Hardware
Sample stage size
  • Max. 8 inch (Φ300mm in option)
Dimensions (W x D x H)
  • ME-210-T 650 × 650 × 1744mm ME-210  650 × 650 × 1740mm
Weight
  • Approx. 200kg
  • Miscellaneous
Interface
  • GigE(camera signal)
Power supply
  • AC100~240V
Software
  • ME-View
Accessories
  • Desktop PC, Monitor, User manual, Standard sample

Catalog & Company brochure Download

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