High-Speed Ellipsometer 2D Film Thickness Measurement System

ME-210 / ME-310

ME-210/ME-310 2D scan allows to measure the film thickness changes of less than 1 nm
at high speed and high density. Support size up to φ12 inches (300 mm) wafer.

Various functions / options to support film thickness measurement.
・compatible with transparent substrates
・zoom & high resolution measurement

Specifications
  • measurement
Repeatability
  • Thickness: 0.1nm
    Refractive index: 0.001 ※Standard deviation of the 100 repeatedly measurement of SiO2 (about 100 nm thickness) on Si
Speed
  • Wide-area mode 900 points/min
    High –resolution mode 10,000 points/min (accuracy: standard)
Light source
  • Semiconductor Laser (wavelength: 636nm)
Spot size
  • Wide-area mode : 0.5mm □
    Intermediate mode : 55µm □
    High-resolution mode : 5.5µm □
Incident angle
  • 70°
Dimensions
(W x D x H)
  • 270 × 337 × Max 631mm
Transparent substrate measurement
  • ME-210-T  Yes
    ME-210   No
    ME-310   No
  • Hardware
Sample stage size
  • ME-210 :Max. 8 inch
    ME-310 :Max. 12 inch
Dimensions
(W x D x H)
  • ME-210 : 650 × 650 × 1740mm
    ME-310 : 790 × 900 × 1740mm
Weight
  • ME-210 : Approx. 200kg
    ME-310 : Approx. 280kg
  • Miscellaneous
Interface
  • GigE(camera signal)
Power supply
  • AC100~240V
Software
  • ME-View
Accessories
  • Desktop PC, Monitor, User manual, Standard sample

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